- RFQ
- BOM
-
Contact Us
Tel: +86-0755-83501315
Email: sales@sic-components.com
- Chinese
- English
- French
- German
- Portuguese
- Spanish
- Russian
- Japanese
- Korean
- Arabic
- Irish
- Greek
- Turkish
- Italian
- Danish
- Romanian
- Indonesian
- Czech
- Afrikaans
- Swedish
- Polish
- Basque
- Catalan
- Esperanto
- Hindi
- Lao
- Albanian
- Amharic
- Armenian
- Azerbaijani
- Belarusian
- Bengali
- Bosnian
- Bulgarian
- Cebuano
- Chichewa
- Corsican
- Croatian
- Dutch
- Estonian
- Filipino
- Finnish
- Frisian
- Galician
- Georgian
- Gujarati
- Haitian
- Hausa
- Hawaiian
- Hebrew
- Hmong
- Hungarian
- Icelandic
- Igbo
- Javanese
- Kannada
- Kazakh
- Khmer
- Kurdish
- Kyrgyz
- Latin
- Latvian
- Lithuanian
- Luxembou..
- Macedonian
- Malagasy
- Malay
- Malayalam
- Maltese
- Maori
- Marathi
- Mongolian
- Burmese
- Nepali
- Norwegian
- Pashto
- Persian
- Punjabi
- Serbian
- Sesotho
- Sinhala
- Slovak
- Slovenian
- Somali
- Samoan
- Scots Gaelic
- Shona
- Sindhi
- Sundanese
- Swahili
- Tajik
- Tamil
- Telugu
- Thai
- Ukrainian
- Urdu
- Uzbek
- Vietnamese
- Welsh
- Xhosa
- Yiddish
- Yoruba
- Zulu
- Kinyarwanda
- Tatar
- Oriya
- Turkmen
- Uyghur
Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK5A60D(STA4,Q,M) | 1.5700 |  |
3980 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK5A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 5A (Ta) | 10V | 1.43Ohm @ 2.5A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | ||||||||||||||
 |
TK055U60Z1,RQ | 5.5900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerSFN | MOSFET (Metal Oxide) | TOLL | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 40A (Ta) | 10V | 55mOhm @ 15A, 10V | 4V @ 1.69mA | 65 nC @ 10 V | ±30V | 3680 pF @ 300 V | - | 270W (Tc) | |||||||||||||||
 |
SSM6N55NU,LF | 0.4400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6N55 | MOSFET (Metal Oxide) | 1W | 6-µDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 4A | 46mOhm @ 4A, 10V | 2.5V @ 100µA | 2.5nC @ 4.5V | 280pF @ 15V | Logic Level Gate | ||||||||||||||||
 |
TK22A65X,S5X | 3.8400 | |
188 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK22A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 22A (Ta) | 10V | 150mOhm @ 11A, 10V | 3.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | ||||||||||||||
 |
TPN5R203PL,LQ | 0.6400 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN5R203 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 38A (Tc) | 4.5V, 10V | 5.2mOhm @ 19A, 10V | 2.1V @ 200µA | 22 nC @ 10 V | ±20V | 1975 pF @ 15 V | - | 610mW (Ta), 61W (Tc) | |||||||||||||||
 |
TK28N65W5,S1F | 6.6700 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-247-3 | TK28N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 27.6A (Ta) | 10V | 130mOhm @ 13.8A, 10V | 4.5V @ 1.6mA | 90 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | ||||||||||||||
 |
TPWR6003PL,L1Q | 3.0600 | |
458 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerWDFN | TPWR6003 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 0.6mOhm @ 50A, 10V | 2.1V @ 1mA | 110 nC @ 10 V | ±20V | 10000 pF @ 15 V | - | 960mW (Ta), 170W (Tc) | |||||||||||||||
 |
SSM3K35MFV(TPL3) | - | |
8872 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-723 | SSM3K35 | MOSFET (Metal Oxide) | VESM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | N-Channel | 20 V | 180mA (Ta) | 1.2V, 4V | 3Ohm @ 50mA, 4V | 1V @ 1mA | ±10V | 9.5 pF @ 3 V | - | 150mW (Ta) | |||||||||||||||
 |
2SK2145-BL(TE85L,F | 0.6800 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-74A, SOT-753 | 2SK2145 | 300 mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 13pF @ 10V | 6 mA @ 10 V | 200 mV @ 100 nA | |||||||||||||||||||||
 |
XPH2R106NC,L1XHQ | 2.1700 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SOIC (0.197", 5.00mm Width) | XPH2R106 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 110A (Ta) | 2.1mOhm @ 55A, 10V | 2.5V @ 1mA | 104 nC @ 10 V | ±20V | 6900 pF @ 10 V | - | 960mW (Ta), 170W (Tc) | |||||||||||||||
 |
TPW4R008NH,L1Q | 2.7900 | |
4510 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerWDFN | TPW4R008 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 80 V | 116A (Tc) | 10V | 4mOhm @ 50A, 10V | 4V @ 1mA | 59 nC @ 10 V | ±20V | 5300 pF @ 40 V | - | 800mW (Ta), 142W (Tc) | ||||||||||||||
 |
TK5P53D(T6RSS-Q) | 1.3400 | |
4199 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK5P53 | MOSFET (Metal Oxide) | D-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 525 V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 80W (Tc) | ||||||||||||||
 |
SSM3J15FS,LF | 0.2500 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-75, SOT-416 | SSM3J15 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | ±20V | 9.1 pF @ 3 V | - | 100mW (Ta) | |||||||||||||||
 |
RN4987FE,LXHF(CT | 0.3800 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4987 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 10kOhms | 47kOhms | ||||||||||||||||||
 |
HN1C01FU-Y,LXHF | 0.4100 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1C01 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 150mA | 100nA (ICBO) | 2 NPN (Dual) | 250mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | |||||||||||||||||||
 |
SSM3K15ACTC,L3F | 0.3200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-101, SOT-883 | SSM3K15 | MOSFET (Metal Oxide) | CST3C | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | ±20V | 13.5 pF @ 3 V | - | 500mW (Ta) | |||||||||||||||
 |
RN2710,LF | 0.3000 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN2710 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 4.7kOhms | - | |||||||||||||||||
|
RN1908,LXHF(CT | 0.3600 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1908 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 22kOhms | 47kOhms | ||||||||||||||||||
 |
TPCF8304(TE85L,F,M | - | |
5747 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCF8304 | MOSFET (Metal Oxide) | 330mW | VS-8 (2.9x1.5) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 P-Channel (Dual) | 30V | 3.2A | 72mOhm @ 1.6A, 10V | 1.2V @ 1mA | 14nC @ 10V | 600pF @ 10V | Logic Level Gate | |||||||||||||||||
|
TK14N65W5,S1F | 4.3100 | |
4776 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK14N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | ||||||||||||||
 |
SSM6L39TU,LF | 0.4600 | |
20 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SSM6L39 | MOSFET (Metal Oxide) | 500mW | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 20V | 800mA | 143mOhm @ 600MA, 4V | 1V @ 1mA | - | 268pF @ 10V | Logic Level Gate, 1.8V Drive | ||||||||||||||||
 |
XPN3R804NC,L1XHQ | 1.4700 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | XPN3R804 | MOSFET (Metal Oxide) | 8-TSON Advance-WF (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 40A (Ta) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.5V @ 300µA | 35 nC @ 10 V | ±20V | 2230 pF @ 10 V | - | 840mW (Ta), 100W (Tc) | |||||||||||||||
 |
TK110A10PL,S4X | 1.0900 | |
328 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-220-3 Full Pack | TK110A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 36A (Tc) | 4.5V, 10V | 10.8mOhm @ 18A, 10V | 2.5V @ 300µA | 33 nC @ 10 V | ±20V | 2040 pF @ 50 V | - | 36W (Tc) | ||||||||||||||
|
RN1101,LXHF(CT | 0.3300 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1101 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250 MHz | 4.7 kOhms | 4.7 kOhms | ||||||||||||||||||
 |
TK31Z60X,S1F | 12.4300 | |
11 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-247-4 | TK31Z60 | MOSFET (Metal Oxide) | TO-247-4L(T) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | ||||||||||||||
 |
HN1C03F-B(TE85L,F) | 0.1485 | |
6796 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-74, SOT-457 | HN1C03 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 20V | 300mA | 100nA (ICBO) | 2 NPN (Dual) | 100mV @ 3mA, 30mA | 350 @ 4mA, 2V | 30MHz | ||||||||||||||||||
 |
TPN14006NH,L1Q | 0.3533 | |
4019 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN14006 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 13A (Ta) | 6.5V, 10V | 14mOhm @ 6.5A, 10V | 4V @ 200µA | 15 nC @ 10 V | ±20V | 1300 pF @ 30 V | - | 700mW (Ta), 30W (Tc) | ||||||||||||||
 |
TPC6012(TE85L,F,M) | - | |
5714 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TPC6012 | MOSFET (Metal Oxide) | VS-6 (2.9x2.8) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 6A (Ta) | 2.5V, 4.5V | 20mOhm @ 3A, 4.5V | 1.2V @ 200µA | 9 nC @ 5 V | ±12V | 630 pF @ 10 V | - | 700mW (Ta) | ||||||||||||||
 |
TK42A12N1,S4X | 1.4900 | |
210 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK42A12 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 120 V | 42A (Tc) | 10V | 9.4mOhm @ 21A, 10V | 4V @ 1mA | 52 nC @ 10 V | ±20V | 3100 pF @ 60 V | - | 35W (Tc) | ||||||||||||||
 |
TPH1R306PL1,LQ | 2.4200 | |
9668 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 100A (Tc) | 4.5V, 10V | 1.34mOhm @ 50A, 10V | 2.5V @ 1mA | 91 nC @ 10 V | ±20V | 8100 pF @ 30 V | - | 960mW (Ta), 210W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
Wishlist (0 Items)