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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Voltage - Test | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RN2962(TE85L,F) | 0.4800 |  |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2962 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz | 10kOhms | 10kOhms | ||||||||||||||||||||||||||||||||||||
 |
2SC5359-O(Q) | 3.4000 | |
74 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Active | 150°C (TJ) | Through Hole | TO-3PL | 2SC5359 | 180 W | TO-3P(L) | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0075 | 100 | 230 V | 15 A | 5µA (ICBO) | NPN | 3V @ 800mA, 8A | 80 @ 1A, 5V | 30MHz | |||||||||||||||||||||||||||||||||||||
 |
2SC3672-O(T2ASH,FM | - | |
7881 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SC3672 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 300 V | 100 mA | 100nA (ICBO) | NPN | 500mV @ 2mA, 20mA | 30 @ 20mA, 10V | 80MHz | ||||||||||||||||||||||||||||||||||||||
 |
RN4905FE,LF(CT | 0.2700 | |
2228 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4905 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 2.2kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||||
 |
1SS307E,L3F | 0.1900 | |
98 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-79, SOD-523 | 1SS307 | Standard | SC-79 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 8,000 | Small Signal =< 200mA (Io), Any Speed | 80 V | 1.3 V @ 100 mA | 10 nA @ 80 V | 150°C (Max) | 100mA | 6pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||||
|
RN1909FE(TE85L,F) | 0.3500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1909 | 100mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 47kOhms | 22kOhms | ||||||||||||||||||||||||||||||||||||
 |
TTA006B,Q | 0.6200 | |
103 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | 1.5 W | TO-126N | download | 1 (Unlimited) | 264-TTA006BQ | EAR99 | 8541.29.0095 | 250 | 230 V | 1 A | 200nA (ICBO) | PNP | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 70MHz | ||||||||||||||||||||||||||||||||||||||
 |
RN1308,LF | 0.1800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1308 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 22 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||||||||
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2SA1837,F(J | - | |
8030 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1837 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | PNP | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 70MHz | ||||||||||||||||||||||||||||||||||||||
|
RN2903FE(TE85L,F) | 0.3400 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2903 | 100mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz | 22kOhms | 22kOhms | ||||||||||||||||||||||||||||||||||||
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TK4R1A10PL,S4X | 2.0400 | |
40 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-220-3 Full Pack | TK4R1A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 80A (Tc) | 4.5V, 10V | 4.1mOhm @ 40A, 10V | 2.5V @ 1mA | 104 nC @ 10 V | ±20V | 6320 pF @ 50 V | - | 54W (Tc) | |||||||||||||||||||||||||||||||||
 |
RFM01U7P(TE12L,F) | 1.2713 | |
3591 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 20 V | Surface Mount | TO-243AA | RFM01U7 | 520MHz | MOSFET | PW-MINI | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 1A | 100 mA | 1.2W | 10.8dB | - | 7.2 V | ||||||||||||||||||||||||||||||||||||
 |
TBAW56,LM | 0.2100 | |
20 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-23-3 Flat Leads | TBAW56 | Standard | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Standard Recovery >500ns, > 200mA (Io) | 1 Pair Common Anode | 80 V | 215mA | - | ||||||||||||||||||||||||||||||||||||||||
 |
TK9J90E,S1E | 2.7900 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK9J90 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 900 V | 9A (Ta) | 10V | 1.3Ohm @ 4.5A, 10V | 4V @ 900µA | 46 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 250W (Tc) | |||||||||||||||||||||||||||||||||
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2SA1020-Y(F,M) | - | |
9152 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||||||||||||
|
2SC3668-Y,T2WNLF(J | - | |
8244 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SC3668 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||||||||||||
|
RN2969(TE85L,F) | 0.4700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2969 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz | 47kOhms | 22kOhms | ||||||||||||||||||||||||||||||||||||
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TPC8035-H(TE12L,QM | - | |
2642 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8035 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 18A (Ta) | 4.5V, 10V | 3.2mOhm @ 9A, 10V | 2.3V @ 1mA | 82 nC @ 10 V | ±20V | 7800 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||||||||||||
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CMZ22(TE12L,Q,M) | - | |
5156 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | CMZ22 | 2 W | M-FLAT (2.4x3.8) | download | RoHS Compliant | CMZ22(TE12LQM) | EAR99 | 8541.10.0050 | 3,000 | 1.2 V @ 200 mA | 10 µA @ 16 V | 22 V | 30 Ohms | |||||||||||||||||||||||||||||||||||||||
|
2SA1020-Y(T6TOJ,FM | - | |
9874 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||||||||||||
 |
RN4909(T5L,F,T) | - | |
3024 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4909 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz | 47kOhms | 22kOhms | |||||||||||||||||||||||||||||||||||||
|
2SD2695,T6F(M | - | |
9931 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SD2695 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 60 V | 2 A | 10µA (ICBO) | NPN | 1.5V @ 1mA, 1A | 2000 @ 1A, 2V | 100MHz | ||||||||||||||||||||||||||||||||||||||
 |
2SK2917(F) | - | |
7510 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK2917 | MOSFET (Metal Oxide) | TO-3P(N)IS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 18A (Ta) | 10V | 270mOhm @ 10A, 10V | 4V @ 1mA | 80 nC @ 10 V | ±30V | 3720 pF @ 10 V | - | 90W (Tc) | ||||||||||||||||||||||||||||||||||
 |
RN4606(TE85L,F) | 0.3800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN4606 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100µA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz, 250MHz | 4.7kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||||
 |
SSM3J14TTE85LF | - | |
8348 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3J14 | MOSFET (Metal Oxide) | TSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 2.7A (Ta) | 4V, 10V | 85mOhm @ 1.35A, 10V | - | ±20V | 413 pF @ 15 V | - | 700mW (Ta) | |||||||||||||||||||||||||||||||||||
 |
1SS413CT,L3F | 0.3000 | |
32 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-882 | 1SS413 | Schottky | SOD-882 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 20 V | 550 mV @ 50 mA | 500 nA @ 20 V | -55°C ~ 125°C | 50mA | 3.9pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||||
 |
HN3C51F-BL(TE85L,F | - | |
9019 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SC-74, SOT-457 | HN3C51 | 300mW | SM6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 120V | 100mA | 100nA (ICBO) | 2 NPN (Dual) | 300mV @ 1mA, 10mA | 350 @ 2mA, 6V | 100MHz | ||||||||||||||||||||||||||||||||||||||
|
CLS01(TE16L,PAS,Q) | - | |
8647 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS01 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 470 mV @ 10 A | 1 mA @ 30 V | -40°C ~ 125°C | 10A | 530pF @ 10V, 1MHz | |||||||||||||||||||||||||||||||||||||||
 |
TK13A50D(STA4,Q,M) | 3.0300 | |
7833 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK13A50 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 13A (Ta) | 10V | 400mOhm @ 6.5A, 10V | 4V @ 1mA | 38 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 45W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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